skiip 1813gb121-3dl b 7 ? 14 000911 ? by semikron i. power section 3 * skiip613gb121ct per phase absolute maximum ratings symbol conditions 1) values units igbt and inverse diode v ces 1200 v v cc operating dc link voltage 900 v v ges 20 v i c igbt, t heat sink = 25 / 70 c 1800 / 1350 a i cm igbt, t p < 1 ms,t heat sink = 25c 3600 a i f diode, t heat sink = 25 / 70 c 1350 / 1012,5 a i fm diode, t p < 1 ms 2700 a i fsm diode, t j = 150 c, 10ms; sin 12960 a i 2 t (diode) diode, t j = 150 c, 10ms 840 ka 2 s t j , (t stg ) -40...+150 (125) c v isol ac, 1min. 3000 v i c-package 4) t heat sink = 70c, t term = 115 c 3 * 500 a characteristics symbol conditions 1) min. typ. max. units igbt v (br)ces gate driver without supply v ces ?? v i ces v ge = 0, t j = 25 c v ce = v ces t j = 125 c ? ? 3,6 108 ? ? ma ma v ceo 7) t j = 125 c ? 0,9 ? v r t 7) t j = 125 c ? 0,90 ? m ? v cesat 7) i c = 1470a, t j = 125 c ? 2,3 ? v v cesat 7) i c = 1470a, t j = 25 c ?? 2v e on + e off 5) i c =1470a, v cc =600v t j = 125 c v cc =900v ? 515 837 ? mj mj c per skiip, ac side ? 4 ? nf l ce top, bottom ? 4 ? nh r cc-ee resistance, terminal-chip 0,13 m ? inverse diode 2) v f = v ec i f = 1350a; t j = 125 c ? 1,8 ? v v f = v ec i f = 1350a; t j = 25 c ?? 2,5 v e on + e off 5) i f = 1350a; t j = 125 c ? 54 ? mj v to t j = 125 c ? 1,0 ? v r t t j = 125 c ? 0,61 ? m ? thermal characteristics r thjs per igbt ?? 0,024 c/w r thjs per diode ?? 0,042 c/w r thsa 3) l: p16 heat sink; 280 m 3 / h ?? 0,033 c/w w: wk 40; 8l/min; 50% glycol ?? 0,010 c/w current sensor i p rms t a =100 c , v supply = 15v 3 * 400 a i pmax rms t 2 s 3 * 500 a linearity v supply 14,25v, 0 i 700a, per sensor 0,1 % i ppeak t 10 s, per sensor 3000 a mechanical data m1 dc terminals, si units 4 ? 6nm m2 ac terminals, si units 8 ? 10 nm m3 to heat sink 6) ? 3 ? nm skiippack ? ? ? ? sk integrated intelligent power pack 3 rd generation 2-pack skiip 1813gb121-3dl 3) target data housing s33 features ? skiip technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution ? integrated current sensor ? integrated temperature sensor ? high power density 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast) 3) d integrated gate driver u with dc-bus voltage measurement (option for gb) l mounted on standard p16 for forced air cooling w mounted on standard water cooler 4) t term = temperature of terminal 5) with skiippack 3 rd generation gate driver 6) assembly instruction must be followed 7) measured at chip level 8) external paralleling necessary this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee, expressed or implied is made regarding delivery, performance or suitability.
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